| PART |
Description |
Maker |
| K6F2008S2E-F K6F2008S2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM68U2000A |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM) 256Kx8位低功耗和低电压的CMOS静态RAM56K × 8位低功耗和低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
|
ON Semiconductor
|
| 29F200C-55 29F200C-90 29F200C-70 |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 200万位[256Kx8/128Kx16]的CMOS闪存
|
Macronix International Co., Ltd.
|
| BS62LV2008 BS62LV2016SI BS62LV2008DC BS62LV2008DC- |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
From old datasheet system
Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| EDI88257CA EDI88257CA/LPA-C |
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时05555ns
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时055555ns
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs Corporation
|
| FMP3217BAX-FXXX FMP3217BAX-GXXX FMP3217BAX-H60E FM |
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP1216AAX |
8M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| K6F4016U4G-EF70 K6F4016U4G K6F4016U4G-EF55 |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DSK6F3216T6M K6F3216T6M K6F3216T6M-F DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
